Product Category :

IGBT Modules

Manufacturer :

Infineon Technologies

Collector- Emitter Voltage VCEO Max :

600 V

Collector-Emitter Saturation Voltage :

1.95 V

Configuration :

Hex

Continuous Collector Current at 25 C :

35 A

Gate-Emitter Leakage Current :

300 nA

Maximum Operating Temperature :

+ 125 C

Package / Case :

EconoPIM2

Pd - Power Dissipation :

130 W

Product :

IGBT Silicon Modules